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  • IRLD024PBF

IRLD024PBF

Transistor: unipolar, N-MOSFET; 60V; 2.5A; 1.3W; DIP4


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRLD024PBF
  • Package: 4-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 924
  • Description: Transistor: unipolar, N-MOSFET; 60V; 2.5A; 1.3W; DIP4 (Kg)

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Details

Tags

Parameters
Element Configuration Single
Power Dissipation 1.3W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Rise Time 110ns
Factory Lead Time 8 Weeks
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Mount Through Hole
Vgs (Max) ±10V
Mounting Type Through Hole
Fall Time (Typ) 110 ns
Package / Case 4-DIP (0.300, 7.62mm)
Turn-Off Delay Time 23 ns
Number of Pins 4
Continuous Drain Current (ID) 2.5A
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 10V
Operating Temperature -55°C~175°C TJ
Drain to Source Breakdown Voltage 60V
Packaging Tube
Input Capacitance 870pF
Recovery Time 260 ns
Part Status Active
Drain to Source Resistance 100mOhm
Rds On Max 100 mΩ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Height 3.37mm
Length 5mm
Resistance 100mOhm
Width 6.29mm
Radiation Hardening No
REACH SVHC Unknown
Max Operating Temperature 175°C
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 2.5A
Number of Elements 1
Power Dissipation-Max 1.3W Ta
See Relate Datesheet