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  • IRLD110PBF

IRLD110PBF

Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRLD110PBF
  • Package: 4-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 129
  • Description: Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4 (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 540mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 1A
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Power Dissipation 1.3W
Turn On Delay Time 9.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 540mOhm @ 600mA, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
Rise Time 47ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 47 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 1A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 100V
Input Capacitance 250pF
Drain to Source Resistance 540mOhm
Rds On Max 540 mΩ
Nominal Vgs 2 V
Height 3.37mm
Length 5mm
Width 6.29mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet