Products
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RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The
basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and
country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.Parameters | |
---|---|
Vgs(th) (Max) @ Id | 2.5V @ 150μA |
Input Capacitance (Ciss) (Max) @ Vds | 4730pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 29A Ta 100A Tc |
Factory Lead Time | 12 Weeks |
Gate Charge (Qg) (Max) @ Vgs | 82nC @ 10V |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Rise Time | 54ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±16V |
Package / Case | 8-PowerVDFN |
Number of Pins | 8 |
Fall Time (Typ) | 21 ns |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Turn-Off Delay Time | 31 ns |
Packaging | Tape & Reel (TR) |
Published | 2010 |
Continuous Drain Current (ID) | 100A |
Series | HEXFET® |
Gate to Source Voltage (Vgs) | 16V |
JESD-609 Code | e3 |
Drain Current-Max (Abs) (ID) | 29A |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Drain to Source Breakdown Voltage | 40V |
Number of Terminations | 5 |
Pulsed Drain Current-Max (IDM) | 400A |
ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 360 mJ |
Height | 990.6μm |
Resistance | 3.2MOhm |
Length | 6.1468mm |
Terminal Finish | Matte Tin (Sn) |
Width | 5.15mm |
Additional Feature | HIGH RELIABILITY |
Radiation Hardening | No |
Subcategory | FET General Purpose Power |
RoHS Status | ROHS3 Compliant |
Technology | MOSFET (Metal Oxide) |
Lead Free | Lead Free |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PDSO-N5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3.6W Ta 156W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 156W |
Case Connection | DRAIN |
Turn On Delay Time | 21 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.4m Ω @ 50A, 10V |
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