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IRLH7134TRPBF

MOSFET N-CH 40V 26A 8PQFN


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLH7134TRPBF
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 307
  • Description: MOSFET N-CH 40V 26A 8PQFN (Kg)

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Details

Tags

Parameters
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 104W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 25V
Current - Continuous Drain (Id) @ 25°C 26A Ta 85A Tc
Gate Charge (Qg) (Max) @ Vgs 58nC @ 4.5V
Rise Time 75ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 26A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.0033Ohm
Pulsed Drain Current-Max (IDM) 640A
DS Breakdown Voltage-Min 40V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 52 Weeks
Mount Surface Mount
Mounting Type Surface Mount
See Relate Datesheet