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  • IRLI520NPBF

IRLI520NPBF

MOSFET N-CH 100V 8.1A TO220FP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLI520NPBF
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 587
  • Description: MOSFET N-CH 100V 8.1A TO220FP (Kg)

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Details

Tags

Parameters
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 8.1A
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Threshold Voltage 2V
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
JEDEC-95 Code TO-220AB
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Gate to Source Voltage (Vgs) 16V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Drain to Source Breakdown Voltage 100V
Number of Terminations 3
ECCN Code EAR99
Resistance 180MOhm
Dual Supply Voltage 100V
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Avalanche Energy Rating (Eas) 85 mJ
Additional Feature AVALANCHE RATED
Voltage - Rated DC 100V
Isolation Voltage 2kV
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Nominal Vgs 2 V
Height 9.8mm
Current Rating 8.1A
Length 10.6172mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 4.826mm
Qualification Status Not Qualified
REACH SVHC No SVHC
Number of Elements 1
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 27W
Case Connection ISOLATED
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.1A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 22 ns
See Relate Datesheet