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  • IRLI540NPBF

IRLI540NPBF

IRLI540NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLI540NPBF
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 986
  • Description: IRLI540NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Recovery Time 290 ns
Isolation Voltage 2kV
Nominal Vgs 2 V
Height 9.8mm
Length 10.6mm
Width 4.8mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1998
Series HEXFET®
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 53mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 20A
Number of Elements 1
Power Dissipation-Max 54W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection ISOLATED
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 44m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 74nC @ 5V
Rise Time 81ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 62 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 23A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
See Relate Datesheet