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  • IRLL110PBF

IRLL110PBF

MOSFET N-CH 100V 1.5A SOT223


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRLL110PBF
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 549
  • Description: MOSFET N-CH 100V 1.5A SOT223 (Kg)

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Details

Tags

Parameters
Current Rating 1.5A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 3.1W Tc
Element Configuration Single
Power Dissipation 2W
Turn On Delay Time 9.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 540mOhm @ 900mA, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
Rise Time 47ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 1.5A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 100V
Input Capacitance 250pF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 540mOhm
Rds On Max 540 mΩ
Height 1.8mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Supplier Device Package SOT-223
Weight 250.212891mg
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 540mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
See Relate Datesheet