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  • IRLML2060TRPBF

IRLML2060TRPBF

MOSFET N-CH 60V 1.2A SOT23-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLML2060TRPBF
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 572
  • Description: MOSFET N-CH 60V 1.2A SOT23-3 (Kg)

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Details

Tags

Parameters
Fall Time (Typ) 2.8 ns
Turn-Off Delay Time 3.7 ns
Continuous Drain Current (ID) 1.2A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 4.8A
Recovery Time 21 ns
Height 1.016mm
Length 3.0226mm
Width 1.397mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 480MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 1.25W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 4.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 64pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.2A Ta
Gate Charge (Qg) (Max) @ Vgs 0.67nC @ 4.5V
Rise Time 3.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
See Relate Datesheet