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  • IRLML6302TRPBF

IRLML6302TRPBF

MOSFET P-CH 20V 780MA SOT-23


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLML6302TRPBF
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 858
  • Description: MOSFET P-CH 20V 780MA SOT-23 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier Micro3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 600mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -620mA
Number of Elements 1
Power Dissipation-Max 540mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 540mW
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 610mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 97pF @ 15V
Current - Continuous Drain (Id) @ 25°C 780mA Ta
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.45V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) -780mA
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.78A
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Nominal Vgs -1.5 V
Min Breakdown Voltage 20V
Height 1.016mm
Length 3.0226mm
Width 1.397mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet