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IRLMS5703TRPBF

IRLMS5703TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLMS5703TRPBF
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 699
  • Description: IRLMS5703TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 7 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 180mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -2.3A
Number of Elements 1
Power Dissipation-Max 1.7W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 1.6A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.4A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.4 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) -2.3A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.4A
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
Nominal Vgs -1 V
Height 1.4478mm
Length 2.9972mm
Width 1.75mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet