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  • IRLR014PBF

IRLR014PBF

Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-IRLR014PBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 841
  • Description: Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 200mOhm
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 9.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 4.6A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.7A Tc
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V
Rise Time 110ns
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 7.7A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 27.4 mJ
Nominal Vgs 2 V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet