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IRLR2705TRLPBF
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Shipping Cost
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example (South Africa, Brazil, India, Pakistan, Israel, etc.)
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basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and
country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Drain to Source Voltage (Vdss) | 55V |
| JESD-609 Code | e3 |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±16V |
| Part Status | Active |
| JEDEC-95 Code | TO-252AA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Drain Current-Max (Abs) (ID) | 28A |
| Drain-source On Resistance-Max | 0.051Ohm |
| Number of Terminations | 2 |
| Pulsed Drain Current-Max (IDM) | 110A |
| DS Breakdown Voltage-Min | 55V |
| Avalanche Energy Rating (Eas) | 110 mJ |
| ECCN Code | EAR99 |
| RoHS Status | ROHS3 Compliant |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 68W Tc |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Mode | ENHANCEMENT MODE |
| Surface Mount | YES |
| Case Connection | DRAIN |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 40m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Published | 2005 |
| Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 25V |
| Series | HEXFET® |
| Current - Continuous Drain (Id) @ 25°C | 28A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 5V |
See Relate Datesheet