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IRLR3636PBF

IRLR3636PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLR3636PBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 420
  • Description: IRLR3636PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 6.8MOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 143W Tc
Element Configuration Single
Power Dissipation 143W
Turn On Delay Time 45 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3779pF @ 50V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 4.5V
Rise Time 216ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 96 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 99A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 60V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet