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IRLR3636TRLPBF

MOSFET N-CH 60V 50A DPAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLR3636TRLPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 923
  • Description: MOSFET N-CH 60V 50A DPAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 143W
Factory Lead Time 12 Weeks
Case Connection DRAIN
Mount Surface Mount
FET Type N-Channel
Mounting Type Surface Mount
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.8m Ω @ 50A, 10V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Vgs(th) (Max) @ Id 2.5V @ 100μA
Operating Temperature -55°C~175°C TJ
Input Capacitance (Ciss) (Max) @ Vds 3779pF @ 50V
Packaging Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C 50A Tc
Published 2009
Gate Charge (Qg) (Max) @ Vgs 49nC @ 4.5V
Series HEXFET®
Rise Time 216ns
JESD-609 Code e3
Part Status Active
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Fall Time (Typ) 69 ns
Number of Terminations 2
Continuous Drain Current (ID) 50A
JEDEC-95 Code TO-252AA
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Drain-source On Resistance-Max 0.0083Ohm
Technology MOSFET (Metal Oxide)
Drain to Source Breakdown Voltage 60V
Terminal Form GULL WING
Pulsed Drain Current-Max (IDM) 396A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Avalanche Energy Rating (Eas) 170 mJ
RoHS Status ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 143W Tc
See Relate Datesheet