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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRL1404STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount, Through Hole | Tape & Reel (TR) | 2002 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 160A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.703mm | 4.826mm | 4mOhm | Surface Mount | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 3.8W | 18 ns | 3V | 3.8W Ta 200W Tc | 160A | SWITCHING | 38 ns | SILICON | N-Channel | 4m Ω @ 95A, 10V | 3V @ 250μA | 6600pF @ 25V | 140nC @ 5V | 270ns | 130 ns | 20V | 40V | 40V | 3 V | 160A Tc | 640A | 520 mJ | 4.3V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFR3709ZTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 79W Tc | SWITCHING | 0.0065Ohm | 30V | SILICON | N-Channel | 6.5m Ω @ 15A, 10V | 2.25V @ 250μA | 2330pF @ 15V | 26nC @ 4.5V | 30A | 86A Tc | 30V | 340A | 100 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3709ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 79W Tc | SWITCHING | 0.0065Ohm | 30V | SILICON | N-Channel | 6.5m Ω @ 15A, 10V | 2.25V @ 250μA | 2330pF @ 15V | 26nC @ 4.5V | 30A | 86A Tc | 30V | 340A | 100 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF7607TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | HEXFET® | Active | 2 (1 Year) | 8 | 3mm | ROHS3 Compliant | Contains Lead | 6.5A | No | 8 | HIGH RELIABILITY | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | No SVHC | 860μm | 3mm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | Single | 1.8W | 8.5 ns | 1.2V | 1.8W Ta | 6.5A | SWITCHING | 0.03Ohm | 36 ns | SILICON | N-Channel | 30m Ω @ 6.5A, 4.5V | 1.2V @ 250μA | 1310pF @ 15V | 22nC @ 5V | 11ns | 16 ns | 12V | 20V | 6.5A Ta | 50A | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| IRLR3636TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | TO-252AA | DRAIN | Single | 143W | 143W Tc | 50A | SWITCHING | 0.0083Ohm | SILICON | N-Channel | 6.8m Ω @ 50A, 10V | 2.5V @ 100μA | 3779pF @ 50V | 49nC @ 4.5V | 216ns | 69 ns | 60V | 50A Tc | 396A | 170 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB45P03P4L11ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10mm | ROHS3 Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.4mm | 9.25mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 58W | 7 ns | -30V | 58W Tc | -45A | 0.0111Ohm | 45 ns | SILICON | P-Channel | 10.8m Ω @ 45A, 10V | 2V @ 85μA | 3770pF @ 25V | 55nC @ 10V | 3ns | 14 ns | 5V | -30V | 45A Tc | 30V | 180A | 110 mJ | 4.5V 10V | +5V, -16V | ||||||||||||||||||||||||||||||||||||||
| IRF3315STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead | 21A | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | 82mOhm | Surface Mount | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 94W | 9.6 ns | 3.8W Ta 94W Tc | 21A | SWITCHING | 49 ns | SILICON | N-Channel | 82m Ω @ 12A, 10V | 4V @ 250μA | 1300pF @ 25V | 95nC @ 10V | 32ns | 38 ns | 20V | 150V | 21A Tc | 84A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AUIRFU4292 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2015 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 100W | 11 ns | 100W Tc | 9.3A | 16 ns | N-Channel | 345m Ω @ 5.6A, 10V | 5V @ 50μA | 705pF @ 25V | 20nC @ 10V | 15ns | 8.4 ns | 20V | 250V | 9.3A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N04S404AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 10 ns | 40V | 71W Tc | 80A | 0.0046Ohm | 9 ns | SILICON | N-Channel | 4.6m Ω @ 80A, 10V | 4V @ 35μA | 3440pF @ 25V | 43nC @ 10V | 12ns | 20V | 80A Tc | 100 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5305STRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2005 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W Ta 110W Tc | SWITCHING | 0.06Ohm | 55V | SILICON | P-Channel | 60m Ω @ 16A, 10V | 4V @ 250μA | 1200pF @ 25V | 63nC @ 10V | 31A | 31A Tc | 55V | 110A | 280 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF9410TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 7A | No | 8 | AVALANCHE RATED, ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 30mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | 6.3 mm | Single | 2.5W | 7.3 ns | 1V | 2.5W Ta | 7A | SWITCHING | 23 ns | SILICON | N-Channel | 30m Ω @ 7A, 10V | 1V @ 250μA | 550pF @ 25V | 27nC @ 10V | 7.3ns | 17 ns | 20V | 30V | 30V | 1 V | 7A Ta | 70 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD50R800CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 3 (168 Hours) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Contains Lead | DPAK | not_compliant | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 40W | 1 | TO-252 | DRAIN | Halogen Free | N-CHANNEL | Single | 40W | 500V | 800mOhm | 5A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 26 ns | 5.5ns | 15.9 ns | 20V | 550V | 500V | 83 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R1K0CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 3 (168 Hours) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | Contains Lead | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252 | DRAIN | Halogen Free | N-CHANNEL | 600V | 860mOhm | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 600V | 12A | 46 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ0994NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.1W Ta | SWITCHING | 0.009Ohm | 30V | SILICON | N-Channel | 7m Ω @ 5A, 10V | 2V @ 250μA | 890pF @ 15V | 7nC @ 4.5V | 8.5A | 13A Ta | 30V | 52A | 16 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R110CFDXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Tin | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Not Qualified | 1 | TO-220AB | ISOLATED | Halogen Free | Single | 34.7W Tc | 31.2A | SWITCHING | 0.11Ohm | 68 ns | SILICON | N-Channel | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 3240pF @ 100V | 118nC @ 10V | 11ns | 6 ns | 20V | 700V | 31.2A Tc | 650V | 99.6A | 845 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFS4228PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Tube | 2007 | HEXFET® | Obsolete | 1 (Unlimited) | 175°C | -40°C | 10.668mm | RoHS Compliant | Lead Free | 83A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.65mm | 4.826mm | Surface Mount | -40°C~175°C TJ | 150V | MOSFET (Metal Oxide) | 1 | Single | 330W | 18 ns | 15mOhm | D2PAK | 330W Tc | 83A | 24 ns | N-Channel | 15mOhm @ 33A, 10V | 5V @ 250μA | 4530pF @ 25V | 107nC @ 10V | 30V | 150V | 83A Tc | 150V | 4.53nF | 10V | ±30V | 15 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRL60SL216 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Active | Not Applicable | EAR99 | ROHS3 Compliant | Lead Free | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 375W Tc | 195A | N-Channel | 1.95m Ω @ 100A, 10V | 2.4V @ 250μA | 15330pF @ 25V | 255nC @ 4.5V | 195A Tc | 60V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLS3034-7TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 7 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G6 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-263CB | DRAIN | 380W | 71 ns | 380W Tc | 240A | SWITCHING | 94 ns | SILICON | N-Channel | 1.4m Ω @ 200A, 10V | 2.5V @ 250μA | 10990pF @ 40V | 180nC @ 4.5V | 590ns | 200 ns | 20V | 40V | 380A | 240A Tc | 250 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFPS3815PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Bulk | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 16.0782mm | ROHS3 Compliant | Lead Free | 105A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-274AA | 20.8mm | 5.3mm | Through Hole | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | DRAIN | Single | 441W | 22 ns | 441W Tc | 105A | SWITCHING | 51 ns | SILICON | N-Channel | 15m Ω @ 63A, 10V | 5V @ 250μA | 6810pF @ 25V | 390nC @ 10V | 130ns | 60 ns | 30V | 150V | 105A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP04CN10NGXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | 2008 | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-220 | No SVHC | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 300W | 1 | Halogen Free | N-CHANNEL | Single | 300W | 34 ns | 3V | 100V | 3.9mOhm | 100A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 76 ns | 78ns | 25 ns | 20V | 100V | 100V | 400A | 1000 mJ | 13.8nF | 4.2 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPI110N20N3GAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 300W | 18 ns | 200V | 300W Tc | 88A | SWITCHING | 41 ns | SILICON | N-Channel | 11m Ω @ 88A, 10V | 4V @ 270μA | 7100pF @ 100V | 87nC @ 10V | 26ns | 11 ns | 20V | 88A Tc | 352A | 560 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPL60R065C7AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 2A (4 Weeks) | 4 | EAR99 | 150°C | -40°C | ROHS3 Compliant | Contains Lead | not_compliant | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PSSO-N4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | N-CHANNEL | 600V | 56mOhm | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 29A | 600V | 135A | 159 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R099CPAAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2009 | CoolMOS™ | no | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 | not_compliant | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 255W Tc | SWITCHING | 0.105Ohm | 600V | SILICON | N-Channel | 105m Ω @ 18A, 10V | 3.5V @ 1.2mA | 2800pF @ 100V | 80nC @ 10V | 31A | 31A Tc | 600V | 93A | 800 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ60R017C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | 2013 | yes | Active | 1 (Unlimited) | EAR99 | 150°C | -55°C | ROHS3 Compliant | 25.22mm | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | 446W | 30 ns | 15mOhm | 109A | 150°C | 106 ns | 20V | 600V | 650V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R017C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | TO-247-3 | 25.4mm | ENHANCEMENT MODE | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 446W | 30 ns | 15mOhm | 109A | 150°C | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 106 ns | 20V | 600V | 650V | 495A | 582 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB50R140CPATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2007 | CoolMOS™ | no | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 192W | 35 ns | 500V | 192W Tc | 23A | SWITCHING | 80 ns | SILICON | N-Channel | 140m Ω @ 14A, 10V | 3.5V @ 930μA | 2540pF @ 100V | 64nC @ 10V | 14ns | 8 ns | 20V | 23A Tc | 550V | 56A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPI100N10S305AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 300W | 34 ns | 100V | 300W Tc | 100A | 60 ns | SILICON | N-Channel | 5.1m Ω @ 100A, 10V | 4V @ 240μA | 11570pF @ 25V | 176nC @ 10V | 17ns | 20 ns | 20V | 100A Tc | 400A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8407TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | IRFS8407 | YES | FET General Purpose Power | Single | 230W Tc | N-Channel | 1.8m Ω @ 100A, 10V | 4V @ 150μA | 7330pF @ 25V | 225nC @ 10V | 195A | 195A Tc | 40V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL38N20DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | 10.67mm | ROHS3 Compliant | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 9.65mm | 4.826mm | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | FET General Purpose Power | 300W | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W | 16 ns | 5V | 44A | SWITCHING | 0.054Ohm | 200V | 29 ns | N-Channel | 54m Ω @ 26A, 10V | 5V @ 250μA | 2900pF @ 25V | 91nC @ 10V | 95ns | 47 ns | 30V | 43A Tc | 200V | 460 mJ | |||||||||||||||||||||||||||||||||||||||||
| SPI21N50C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2005 | CoolMOS™ | Not For New Designs | 1 (Unlimited) | 150°C | -55°C | 10.36mm | ROHS3 Compliant | Lead Free | 11.6A | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.45mm | 4.52mm | Through Hole | -55°C~150°C TJ | 560V | MOSFET (Metal Oxide) | Halogen Free | Single | 208W | 10 ns | 500V | 190mOhm | PG-TO262-3-1 | 208W Tc | 21A | 67 ns | N-Channel | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 2400pF @ 25V | 95nC @ 10V | 5ns | 4.5 ns | 20V | 500V | 21A Tc | 560V | 2.4nF | 10V | ±20V | 190 mΩ |