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  • IRLR8113PBF

IRLR8113PBF

MOSFET N-CH 30V 94A DPAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLR8113PBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 652
  • Description: MOSFET N-CH 30V 94A DPAK (Kg)

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Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 94A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 4.5V
Rise Time 3.8ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 94A
Threshold Voltage 2.25V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.92nF
Recovery Time 49 ns
Drain to Source Resistance 7.4mOhm
Rds On Max 6 mΩ
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 6MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 94A
Number of Elements 1
Power Dissipation-Max 89W Tc
Element Configuration Single
Power Dissipation 89W
Turn On Delay Time 9.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2920pF @ 15V
See Relate Datesheet