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  • IRLR8256TRPBF

IRLR8256TRPBF

IRLR8256TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLR8256TRPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 549
  • Description: IRLR8256TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Continuous Drain Current (ID) 81A
JESD-609 Code e3
JEDEC-95 Code TO-252AA
Part Status Active
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0057Ohm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 86 mJ
Number of Terminations 2
ECCN Code EAR99
Height 2.3876mm
Length 6.7056mm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Width 6.22mm
Subcategory FET General Purpose Power
Radiation Hardening No
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 63W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 63W
Case Connection DRAIN
Turn On Delay Time 9.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Factory Lead Time 12 Weeks
Mount Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 13V
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C 81A Tc
Number of Pins 3
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 46ns
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Packaging Tape & Reel (TR)
Fall Time (Typ) 8.5 ns
Published 2007
Turn-Off Delay Time 12 ns
Series HEXFET®
See Relate Datesheet