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  • IRLU2703PBF

IRLU2703PBF

MOSFET N-CH 30V 23A I-PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLU2703PBF
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 371
  • Description: MOSFET N-CH 30V 23A I-PAK (Kg)

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Details

Tags

Parameters
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Current Rating 23A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 45W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 38W
Case Connection DRAIN
Turn On Delay Time 8.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 140ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 23A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 96A
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 77 mJ
Factory Lead Time 13 Weeks
Mount Through Hole
Nominal Vgs 1 V
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Height 6.22mm
Number of Pins 3
Transistor Element Material SILICON
Length 6.7056mm
Operating Temperature -55°C~175°C TJ
Packaging Tube
Width 2.3876mm
Published 2003
Series HEXFET®
Radiation Hardening No
JESD-609 Code e3
REACH SVHC No SVHC
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status RoHS Compliant
Number of Terminations 3
ECCN Code EAR99
Resistance 45mOhm
Lead Free Lead Free
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED
See Relate Datesheet