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IRLU3802PBF

IRLU3802PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLU3802PBF
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 665
  • Description: IRLU3802PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 88W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 15A, 4.5V
Vgs(th) (Max) @ Id 1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2490pF @ 6V
Current - Continuous Drain (Id) @ 25°C 84A Tc
Mount Through Hole
Gate Charge (Qg) (Max) @ Vgs 41nC @ 5V
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Rise Time 14ns
Number of Pins 3
Drive Voltage (Max Rds On,Min Rds On) 2.8V 4.5V
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Vgs (Max) ±12V
Packaging Tube
Fall Time (Typ) 17 ns
Published 2004
Turn-Off Delay Time 21 ns
Series HEXFET®
Continuous Drain Current (ID) 84A
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate to Source Voltage (Vgs) 12V
Number of Terminations 3
Drain to Source Breakdown Voltage 12V
ECCN Code EAR99
Height 6.22mm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Length 6.7056mm
Subcategory FET General Purpose Power
Voltage - Rated DC 12V
Width 2.3876mm
Technology MOSFET (Metal Oxide)
Radiation Hardening No
Peak Reflow Temperature (Cel) 260
RoHS Status RoHS Compliant
Current Rating 84A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Lead Free Lead Free
Power Dissipation-Max 88W Tc
Element Configuration Single
See Relate Datesheet