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IRLU9343PBF

IRLU9343PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLU9343PBF
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 722
  • Description: IRLU9343PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 11 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Packaging Tube
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Voltage - Rated DC -55V
Max Power Dissipation 79W
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating -20A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 79W
Case Connection DRAIN
Turn On Delay Time 9.5 ns
FET Type P-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 105m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 50V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 24ns
Drain to Source Voltage (Vdss) 55V
Fall Time (Typ) 9.5 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) -20A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 60A
Height 6.22mm
Length 6.7056mm
Width 2.3876mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet