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  • IRS2001PBF

IRS2001PBF

Through Hole Tube Not For New Designs EAR99 Gate Drivers ICs Non-Inverting 200V V 8-DIP (0.300, 7.62mm) IRS2001PBF Half-Bridge


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRS2001PBF
  • Package: 8-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 437
  • Description: Through Hole Tube Not For New Designs EAR99 Gate Drivers ICs Non-Inverting 200V V 8-DIP (0.300, 7.62mm) IRS2001PBF Half-Bridge (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case 8-DIP (0.300, 7.62mm)
Number of Pins 8
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 1996
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory MOSFET Drivers
Max Power Dissipation 1W
Technology CMOS
Voltage - Supply 10V~20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 250
Number of Functions 1
Supply Voltage 15V
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRS2001PBF
Number of Outputs 2
Output Voltage 20V
Max Output Current 600mA
Power Supplies 15V
Nominal Supply Current 270μA
Power Dissipation 1W
Output Current 130mA
Max Supply Current 270μA
Propagation Delay 220 ns
Input Type Non-Inverting
Turn On Delay Time 160 ns
Rise Time 100ns
Fall Time (Typ) 60 ns
Turn-Off Delay Time 150 ns
Release Time 150 ns
Rise / Fall Time (Typ) 70ns 35ns
Interface IC Type BUFFER OR INVERTER BASED PERIPHERAL DRIVER
Channel Type Independent
Driven Configuration Half-Bridge
Gate Type IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink) 290mA 600mA
Logic Voltage - VIL, VIH 0.8V 2.5V
Built-in Protections TRANSIENT; UNDER VOLTAGE
High Side Voltage - Max (Bootstrap) 200V
Height 4.9276mm
Length 10.8966mm
Width 7.11mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRS2001PBF Overview


For greater flexibility, the 8-DIP (0.300, 7.62mm) package is adopted.A packaging method of Tube is indicated.In this case, gate drivers is mounted along the way of Through Hole.A supply voltage of 10V~20V demonstrates its superiority.Gate type IGBT, N-Channel MOSFET has been used in its design.In this device, temperatures must not exceed -40°C~150°C TJ.Non-Inverting is used as the input type in this program.Initially, the configuration is composed of 8 terminations.Numerous related parts are available for its base part number IRS2001PBF.In this case, Through Hole indicates how the device is to be mounted.During design, it is configured with 8 pins.The device is specifically designed to operate at 15V volts.As its interface IC, BUFFER OR INVERTER BASED PERIPHERAL DRIVER is being employed.Mosfet driver is possible for the output current to be as low as 600mA.There are several useful electronic components found in its subcategory of MOSFET Drivers.There can be a voltage up to 200V on the high-side (Bootstrap).Mosfet driver has been integrated wMosfet driverh a total of 2 outputs for Mosfet drivers basis.Mosfet gate drivers can deliver a current of 130mA.Based on its maximum power dissipation of 1W, it is clear that it is capable of transferring and conducting power loss without overheating.The supply current should be kept at 270μA to ensure higher stability.Due to its 15V power supply, it can solve power supply problems for an array of diverse applications.A voltage of 20V is output by this device.

IRS2001PBF Features


Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 200V
Maximum power dissipation of 1W

IRS2001PBF Applications


There are a lot of Infineon Technologies IRS2001PBF gate drivers applications.

  • Solar inverters
  • Commercial and agricultural vehicles (CAV)
  • DC/DC converters
  • Topologies
  • 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
  • Dual-Battery Systems
  • Motor Controls
  • Telecom switch mode power supplies
  • Power factor correction (PFC) circuits
  • Isolated switch mode power supplies (SMPS)