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ISL9V3036S3ST

ISL9V3036S3ST datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-ISL9V3036S3ST
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 931
  • Description: ISL9V3036S3ST datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 7 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Series EcoSPARK®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 360V
Max Power Dissipation 150W
Terminal Form GULL WING
Current Rating 21A
Base Part Number ISL9V3036
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 7000ns
Element Configuration Single
Power Dissipation 150W
Case Connection COLLECTOR
Input Type Logic
Turn On Delay Time 700 ns
Clamping Voltage 360V
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 4.8 μs
Collector Emitter Voltage (VCEO) 1.58V
Max Collector Current 21A
Collector Emitter Breakdown Voltage 360V
Max Breakdown Voltage 360V
Turn On Time 2800 ns
Test Condition 300V, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.6V @ 4V, 6A
Turn Off Time-Nom (toff) 7600 ns
Gate Charge 17nC
Td (on/off) @ 25°C -/4.8μs
Gate-Emitter Voltage-Max 12V
Gate-Emitter Thr Voltage-Max 2.2V
Fall Time-Max (tf) 15000ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet