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ISL9V5036S3ST

ISL9V5036S3ST datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-ISL9V5036S3ST
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 104
  • Description: ISL9V5036S3ST datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series EcoSPARK®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 360V
Max Power Dissipation 250W
Terminal Form GULL WING
Current Rating 46A
Base Part Number ISL9V5036
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Case Connection COLLECTOR
Input Type Logic
Clamping Voltage 360V
Transistor Application AUTOMOTIVE IGNITION
Rise Time 2.1μs
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 46A
Collector Emitter Breakdown Voltage 390V
Collector Emitter Saturation Voltage 1.17V
Max Breakdown Voltage 390V
Turn On Time 2800 ns
Test Condition 300V, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.6V @ 4V, 10A
Turn Off Time-Nom (toff) 13600 ns
Gate Charge 32nC
Td (on/off) @ 25°C -/10.8μs
Gate-Emitter Voltage-Max 12V
Gate-Emitter Thr Voltage-Max 2.2V
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet