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  • IXA20I1200PB

IXA20I1200PB

IXYS SEMICONDUCTOR IXA20I1200PB IGBT Single Transistor, 33 A, 2.1 V, 130 W, 1.2 kV, TO-220AB, 3 Pins


  • Manufacturer: IXYS
  • Origchip NO: 401-IXA20I1200PB
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 570
  • Description: IXYS SEMICONDUCTOR IXA20I1200PB IGBT Single Transistor, 33 A, 2.1 V, 130 W, 1.2 kV, TO-220AB, 3 Pins (Kg)

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Details

Tags

Parameters
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 165W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 130W
Input Type Standard
Power - Max 165W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 38A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 110 ns
Test Condition 600V, 15A, 56 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 15A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
Gate Charge 47nC
Switching Energy 1.65mJ (on), 1.7mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 16mm
Length 10.66mm
Width 4.82mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet