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IXA37IF1200HJ
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The
basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and
country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Length | 16.13mm |
| Width | 5.21mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 28 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUS247™ |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 195W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 195W |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 58A |
| Reverse Recovery Time | 350ns |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.1V |
| Turn On Time | 110 ns |
| Test Condition | 600V, 35A, 27 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 35A |
| Turn Off Time-Nom (toff) | 350 ns |
| IGBT Type | PT |
| Gate Charge | 106nC |
| Switching Energy | 3.8mJ (on), 4.1mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Height | 21.34mm |
See Relate Datesheet