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IXA37IF1200HJ

IXYS SEMICONDUCTOR IXA37IF1200HJ IGBT Single Transistor, 58 A, 2.1 V, 195 W, 1.2 kV, TO-247AD, 3 Pins


  • Manufacturer: IXYS
  • Origchip NO: 401-IXA37IF1200HJ
  • Package: ISOPLUS247™
  • Datasheet: PDF
  • Stock: 233
  • Description: IXYS SEMICONDUCTOR IXA37IF1200HJ IGBT Single Transistor, 58 A, 2.1 V, 195 W, 1.2 kV, TO-247AD, 3 Pins (Kg)

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Details

Tags

Parameters
Length 16.13mm
Width 5.21mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 195W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 195W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 58A
Reverse Recovery Time 350ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 110 ns
Test Condition 600V, 35A, 27 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
Gate Charge 106nC
Switching Energy 3.8mJ (on), 4.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.34mm
See Relate Datesheet