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IXDN75N120

IGBT MOD 1200V 150A 660W SOT227B


  • Manufacturer: IXYS
  • Origchip NO: 401-IXDN75N120
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 883
  • Description: IGBT MOD 1200V 150A 660W SOT227B (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 28 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2000
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Nickel (Ni)
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 660W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 660W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 150A
Current - Collector Cutoff (Max) 4mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.2V
Input Capacitance 5.5nF
Turn On Time 150 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 75A
Turn Off Time-Nom (toff) 700 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 5.5nF @ 25V
VCEsat-Max 2.7 V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet