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  • IXDR30N120

IXDR30N120

IXYS SEMICONDUCTOR IXDR30N120 IGBT Single Transistor, Isolated, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 Pins


  • Manufacturer: IXYS
  • Origchip NO: 401-IXDR30N120
  • Package: ISOPLUS247™
  • Datasheet: PDF
  • Stock: 612
  • Description: IXYS SEMICONDUCTOR IXDR30N120 IGBT Single Transistor, Isolated, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 Pins (Kg)

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Details

Tags

Parameters
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXD*30N120
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 200W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 100 ns
Transistor Application POWER CONTROL
Rise Time 70ns
Turn-Off Delay Time 500 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.4V
Turn On Time 170 ns
Test Condition 600V, 30A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 30A
Turn Off Time-Nom (toff) 570 ns
IGBT Type NPT
Gate Charge 120nC
Current - Collector Pulsed (Icm) 60A
Switching Energy 4.6mJ (on), 3.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
See Relate Datesheet