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IXEN60N120D1

IGBT MOD 1200V 100A 445W SOT227B


  • Manufacturer: IXYS
  • Origchip NO: 401-IXEN60N120D1
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 839
  • Description: IGBT MOD 1200V 100A 445W SOT227B (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Nickel (Ni)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 445W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Turn On Delay Time 80 ns
Power - Max 445W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Turn-Off Delay Time 680 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 100A
Current - Collector Cutoff (Max) 800μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.1V
Input Capacitance 3.8nF
Turn On Time 130 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 60A
Turn Off Time-Nom (toff) 710 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.8nF @ 25V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet