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IXER35N120D1

IXYS SEMICONDUCTOR IXER35N120D1 IGBT Single Transistor, 50 A, 2.2 V, 200 W, 1.2 kV, ISOPLUS-247, 3 Pins


  • Manufacturer: IXYS
  • Origchip NO: 401-IXER35N120D1
  • Package: ISOPLUS247™
  • Datasheet: PDF
  • Stock: 911
  • Description: IXYS SEMICONDUCTOR IXER35N120D1 IGBT Single Transistor, 50 A, 2.2 V, 200 W, 1.2 kV, ISOPLUS-247, 3 Pins (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 247
Weight 5.3g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 50A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 200W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 85 ns
Transistor Application POWER CONTROL
Rise Time 50ns
Turn-Off Delay Time 440 ns
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 50A
Reverse Recovery Time 80 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 135 ns
Test Condition 600V, 35A, 39 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 35A
Turn Off Time-Nom (toff) 490 ns
IGBT Type NPT
Gate Charge 150nC
Switching Energy 5.4mJ (on), 2.6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet