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IXFB52N90P

MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFB52N90P
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 246
  • Description: MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series HiPerFET™, PolarP2™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25kW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 19000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Gate Charge (Qg) (Max) @ Vgs 308nC @ 10V
Rise Time 80ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 95 ns
Continuous Drain Current (ID) 52A
Threshold Voltage 3.5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.16Ohm
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 104A
Avalanche Energy Rating (Eas) 2000 mJ
Nominal Vgs 3.5 V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 26 Weeks
See Relate Datesheet