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IXFH20N80Q

MOSFET N-CH 800V 20A TO-247AD


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFH20N80Q
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 357
  • Description: MOSFET N-CH 800V 20A TO-247AD (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Power Dissipation 360W
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 420m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 74 ns
Reverse Recovery Time 250 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 4.5V
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 80A
Dual Supply Voltage 800V
Avalanche Energy Rating (Eas) 1500 mJ
Nominal Vgs 4.5 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Series HiPerFET™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 420mOhm
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 20A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 360W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet