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IXFH230N075T2

MOSFET N-CH 75V 230A TO-247


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFH230N075T2
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 661
  • Description: MOSFET N-CH 75V 230A TO-247 (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230A Tc
Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 230A
JEDEC-95 Code TO-247AD
Drain-source On Resistance-Max 0.0042Ohm
Pulsed Drain Current-Max (IDM) 700A
DS Breakdown Voltage-Min 75V
Avalanche Energy Rating (Eas) 850 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series TrenchT2™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 480W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
See Relate Datesheet