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  • IXFH26N50Q

IXFH26N50Q

MOSFET N-CH 500V 26A TO-247AD


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFH26N50Q
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 270
  • Description: MOSFET N-CH 500V 26A TO-247AD (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 55 ns
Reverse Recovery Time 250 ns
Continuous Drain Current (ID) 26A
Threshold Voltage 4V
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Dual Supply Voltage 500V
Nominal Vgs 4.5 V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 200mOhm
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 26A
Pin Count 3
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 25V
See Relate Datesheet