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  • IXFH60N50P3

IXFH60N50P3

MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFH60N50P3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 525
  • Description: MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET (Kg)

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Details

Tags

Parameters
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 1040W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.04kW
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 6250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 5V
JEDEC-95 Code TO-247AD
Factory Lead Time 30 Weeks
Gate to Source Voltage (Vgs) 30V
Mount Through Hole
Drain to Source Breakdown Voltage 500V
Mounting Type Through Hole
Height 21.46mm
Package / Case TO-247-3
Length 16.26mm
Number of Pins 3
Width 5.3mm
Radiation Hardening No
Transistor Element Material SILICON
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Operating Temperature -55°C~150°C TJ
Lead Free Lead Free
Packaging Tube
Published 2012
Series HiPerFET™, Polar3™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
See Relate Datesheet