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  • IXFH6N100F

IXFH6N100F

IXYS RF IXFH6N100F RF FET Transistor, 1 kV, 6 A, 180 W, 500 kHz, TO-247AD


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFH6N100F
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 452
  • Description: IXYS RF IXFH6N100F RF FET Transistor, 1 kV, 6 A, 180 W, 500 kHz, TO-247AD (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Packaging Tube
Rds On (Max) @ Id, Vgs 1.9 Ω @ 3A, 10V
Published 2003
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Series HiPerRF™
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
JESD-609 Code e1
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Rise Time 8.6ns
Pbfree Code yes
Drain to Source Voltage (Vdss) 1000V
Part Status Active
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.3 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Turn-Off Delay Time 31 ns
Number of Terminations 3
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 1kV
ECCN Code EAR99
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 700 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Resistance 1.9Ohm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Factory Lead Time 30 Weeks
Number of Elements 1
Mounting Type Through Hole
Power Dissipation-Max 180W Tc
Package / Case TO-247-3
Element Configuration Single
Surface Mount NO
Operating Mode ENHANCEMENT MODE
Power Dissipation 180W
Number of Pins 3
Transistor Element Material SILICON
Case Connection DRAIN
FET Type N-Channel
Operating Temperature -55°C~150°C TJ
See Relate Datesheet