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  • IXFK21N100F

IXFK21N100F

IXYS RF IXFK21N100F RF FET Transistor, 1 kV, 21 A, 500 W, 500 kHz, TO-264


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFK21N100F
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 231
  • Description: IXYS RF IXFK21N100F RF FET Transistor, 1 kV, 21 A, 500 W, 500 kHz, TO-264 (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 500W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 500m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.5Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 84A
Avalanche Energy Rating (Eas) 2500 mJ
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Factory Lead Time 10 Weeks
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Series HiPerRF™
Pbfree Code yes
Part Status Obsolete
See Relate Datesheet