All Products

IXFK360N15T2

Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFK360N15T2
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 143
  • Description: Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series GigaMOS™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Output Voltage 150V
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1670W Tc
Nominal Supply Current 100A
Operating Mode ENHANCEMENT MODE
Output Current 360A
Case Connection DRAIN
Turn On Delay Time 50 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 47500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 360A Tc
Gate Charge (Qg) (Max) @ Vgs 715nC @ 10V
Rise Time 170ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 265 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) 360A
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 900A
Number of Drivers 1
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet