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  • IXFK44N80P

IXFK44N80P

Single N-Channel 800 Vds 190 mOhm 1040 W Power Mosfet - TO-264


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFK44N80P
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 606
  • Description: Single N-Channel 800 Vds 190 mOhm 1040 W Power Mosfet - TO-264 (Kg)

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Details

Tags

Parameters
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HiPerFET™, PolarHT™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 190MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 1040W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.04kW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 198nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 44A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet