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  • IXFL100N50P

IXFL100N50P

IXYS SEMICONDUCTOR IXFL100N50P MOSFET Transistor, N Channel, 70 A, 500 V, 52 mohm, 10 V, 5 V


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFL100N50P
  • Package: ISOPLUS264™
  • Datasheet: PDF
  • Stock: 216
  • Description: IXYS SEMICONDUCTOR IXFL100N50P MOSFET Transistor, N Channel, 70 A, 500 V, 52 mohm, 10 V, 5 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS264™
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HiPerFET™, PolarHT™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 625W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 625W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 20000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 29ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 70A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.052Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 250A
Avalanche Energy Rating (Eas) 5000 mJ
Isolation Voltage 2.5kV
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet