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IXFN140N25T

MOSFET N-CH 250V 120A SOT-227


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFN140N25T
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 185
  • Description: MOSFET N-CH 250V 120A SOT-227 (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 30 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series GigaMOS™ HiPerFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish NICKEL
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PUFM-X4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 690W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 19000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 120A
Drain-source On Resistance-Max 0.017Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 250V
Avalanche Energy Rating (Eas) 3000 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet