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  • IXFN140N30P

IXFN140N30P

Single N-Channel 300 Vds 24 mOhm 700 W Power Mosfet - SOT-227B


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFN140N30P
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 257
  • Description: Single N-Channel 300 Vds 24 mOhm 700 W Power Mosfet - SOT-227B (Kg)

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Details

Tags

Parameters
Factory Lead Time 30 Weeks
Mount Chassis Mount, Panel
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series Polar™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 24mOhm
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 700W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700W
Case Connection ISOLATED
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 115A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 110A
Drain to Source Breakdown Voltage 300V
Pulsed Drain Current-Max (IDM) 300A
Avalanche Energy Rating (Eas) 5000 mJ
Height 9.6mm
Length 38.2mm
Width 25.07mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet