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  • IXFN360N10T

IXFN360N10T

Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFN360N10T
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 696
  • Description: Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B (Kg)

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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 30 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HiPerFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 2.6MOhm
Terminal Finish NICKEL
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Number of Elements 1
Power Dissipation-Max 830W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 830W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 180A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 36000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 360A Tc
Gate Charge (Qg) (Max) @ Vgs 505nC @ 10V
Rise Time 100ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 160 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 360A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 900A
Avalanche Energy Rating (Eas) 2000 mJ
Radiation Hardening No
See Relate Datesheet