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  • IXFT16N120P

IXFT16N120P

Trans MOSFET N-CH 1.2KV 16A 3-Pin(2+Tab) TO-268


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFT16N120P
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 654
  • Description: Trans MOSFET N-CH 1.2KV 16A 3-Pin(2+Tab) TO-268 (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series HiPerFET™, PolarP2™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 660W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 660W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 28ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 66 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.95Ohm
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 35A
Avalanche Energy Rating (Eas) 800 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet