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  • IXFT24N90P

IXFT24N90P

MOSFET N-CH TO-268


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFT24N90P
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 744
  • Description: MOSFET N-CH TO-268 (Kg)

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Details

Tags

Parameters
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Current - Continuous Drain (Id) @ 25°C 24A Tc
Published 2008
Series HiPerFET™, PolarP2™
JESD-609 Code e3
Pbfree Code yes
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Rise Time 40ns
Number of Terminations 2
Drive Voltage (Max Rds On,Min Rds On) 10V
ECCN Code EAR99
Vgs (Max) ±30V
Terminal Finish Matte Tin (Sn)
Fall Time (Typ) 38 ns
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Turn-Off Delay Time 68 ns
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Continuous Drain Current (ID) 24A
Reach Compliance Code unknown
Threshold Voltage 3.5V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Gate to Source Voltage (Vgs) 30V
JESD-30 Code R-PSSO-G2
Drain-source On Resistance-Max 0.42Ohm
Qualification Status Not Qualified
Drain to Source Breakdown Voltage 900V
Number of Elements 1
Pulsed Drain Current-Max (IDM) 48A
Power Dissipation-Max 660W Tc
Avalanche Energy Rating (Eas) 1000 mJ
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Nominal Vgs 3.5 V
Power Dissipation 660W
REACH SVHC No SVHC
Case Connection DRAIN
RoHS Status ROHS3 Compliant
FET Type N-Channel
Factory Lead Time 26 Weeks
Transistor Application SWITCHING
Mount Surface Mount
Rds On (Max) @ Id, Vgs 420m Ω @ 12A, 10V
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 6.5V @ 1mA
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 25V
See Relate Datesheet