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IXFX120N25P

MOSFET N-CH 250V 120A PLUS247


  • Manufacturer: IXYS
  • Origchip NO: 401-IXFX120N25P
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 634
  • Description: MOSFET N-CH 250V 120A PLUS247 (Kg)

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Rise Time 33ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Avalanche Energy Rating (Eas) 2500 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series PolarHT™ HiPerFET™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 24MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 700W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700W
Case Connection DRAIN
See Relate Datesheet