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  • IXGA30N120B3

IXGA30N120B3

IXYS SEMICONDUCTOR IXGA30N120B3 IGBT Single Transistor, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263, 3 Pins


  • Manufacturer: IXYS
  • Origchip NO: 401-IXGA30N120B3
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 754
  • Description: IXYS SEMICONDUCTOR IXGA30N120B3 IGBT Single Transistor, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263, 3 Pins (Kg)

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Details

Tags

Parameters
Factory Lead Time 30 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series GenX3™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish PURE TIN
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*30N120
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 300W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 60A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.96V
Turn On Time 56 ns
Test Condition 960V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 30A
Turn Off Time-Nom (toff) 471 ns
IGBT Type PT
Gate Charge 87nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 16ns/127ns
Switching Energy 3.47mJ (on), 2.16mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet