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IXGA30N60C3D4

IGBT Transistors 600V 30A


  • Manufacturer: IXYS
  • Origchip NO: 401-IXGA30N60C3D4
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 714
  • Description: IGBT Transistors 600V 30A (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series GenX3™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 220W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 220W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 60A
Reverse Recovery Time 60 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 45 ns
Test Condition 300V, 20A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Turn Off Time-Nom (toff) 160 ns
IGBT Type PT
Gate Charge 38nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 16ns/42ns
Switching Energy 270μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
See Relate Datesheet