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IXGC16N60C2D1

IXYS SEMICONDUCTOR IXGC16N60C2D1 IGBT Single Transistor, 20 A, 3 V, 63 W, ISOPLUS-220, 3 Pins


  • Manufacturer: IXYS
  • Origchip NO: 401-IXGC16N60C2D1
  • Package: ISOPLUS220™
  • Datasheet: PDF
  • Stock: 695
  • Description: IXYS SEMICONDUCTOR IXGC16N60C2D1 IGBT Single Transistor, 20 A, 3 V, 63 W, ISOPLUS-220, 3 Pins (Kg)

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Details

Tags

Parameters
Switching Energy 60μJ (off)
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS220™
Number of Pins 220
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HiPerFAST™
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature UL RECOGNIZED
Max Power Dissipation 63W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*16N60
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 63W
Case Connection ISOLATED
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 35ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Reverse Recovery Time 30ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 3V
Turn On Time 43 ns
Test Condition 400V, 12A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 12A
Turn Off Time-Nom (toff) 185 ns
IGBT Type PT
Gate Charge 32nC
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 25ns/60ns
See Relate Datesheet