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IXGK82N120A3

IGBT 1200V 260A 1250W TO264


  • Manufacturer: IXYS
  • Origchip NO: 401-IXGK82N120A3
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 511
  • Description: IGBT 1200V 260A 1250W TO264 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 109 ns
Test Condition 600V, 80A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 82A
Turn Off Time-Nom (toff) 1590 ns
IGBT Type PT
Gate Charge 340nC
Current - Collector Pulsed (Icm) 580A
Td (on/off) @ 25°C 34ns/265ns
Switching Energy 5.5mJ (on), 12.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
Factory Lead Time 21 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.25kW
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 1250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.05V
Max Collector Current 260A
Collector Emitter Breakdown Voltage 1.2kV
See Relate Datesheet