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IXGN120N60A3

IGBT MOD 600V 200A 595W SOT227B


  • Manufacturer: IXYS
  • Origchip NO: 401-IXGN120N60A3
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 885
  • Description: IGBT MOD 600V 200A 595W SOT227B (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 30 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2009
Series GenX3™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Nickel (Ni)
Additional Feature LOW CONDUCTION LOSS, UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 595W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number IXG*120N60
Pin Count 4
JESD-30 Code R-PUFM-X4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 595W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.35V
Max Collector Current 200A
Current - Collector Cutoff (Max) 50μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 14.8nF
Turn On Time 123 ns
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 100A
Turn Off Time-Nom (toff) 830 ns
IGBT Type PT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 14.8nF @ 25V
RoHS Status ROHS3 Compliant
See Relate Datesheet